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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION *Built-in Base-Emitter Shunt Resistors *High DC current gainhFE = 1000 (Min) @ IC =1 Adc *Collector-Emitter Breakdown VoltageV(BR)CEO= 80V(Min) *Wide Area of Safe Operation APPLICATIONS *Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL VCBO VCER VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current -Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 100 100 80 6 6 3 50 150 -65~150 UNIT V V V V A A W PC Tj Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD692 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCER Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= 1 k 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA B 1.7 V ICBO Collector Cutoff current VCB= 100V; IE=0 10 A IEBO Emitter Cut-off current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 1A ; VCE= 4V 1000 10000 hFE Classifications Q 1000-2500 P 2000-5000 O 4000-10000 isc Websitewww.iscsemi.cn 2 |
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